 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| s25?1/2 features high speed switching for rf signals low diode capacitance low diode forward resistance very low series inductance for applications up to 3 ghz. applications rf attenuators and switches. description planar pin diode in a sod323 small smd plastic package. silicon pin diode sod523 sc-79 1 2 bap63 ? 03 2 anode 1 cathode limiting values in accordance with the absolute maximum rating system (iec 134). symbol p arameter conditions min. max. unit v r continuous reverse voltage ? 50 v ii f continuous forward current ? 100 ma p tot total power dissipation t s < 90c ? 500 mw t stg storage temperature -65 +150 c t j junction temperature -65 +150 c electrical characteristics t j = 25c unless otherwise specified. symbol parameter conditions typ. max. unit v f forward voltage i f =50 ma 0.95 1.1 v i r reverse current v r =35 v ? 10 na c d diode capacitance v r = 0; f = 1 mhz 0.4 ? pf v r = 1 v; f = 1 mhz 0.35 ? pf v r = 20 v; f = 1 mhz 0.27 0.32 pf r d diode forward resistance i f = 0.5 ma; f = 100 mhz; note 1 2.5 3.5 ? i f = 1 ma; f = 100 mhz; note 1 1.95 3 ? i f = 10 ma; f = 100 mhz; note 1 1.17 1.8 ? i f = 100 ma; f = 100 mhz; note 1 0.9 1.5 ? |s 21 | 2 isolation v r = 0; f = 900 mhz 15.4 ? db v r = 0; f = 1800 mhz 10.1 ? db v r = 0; f = 2450 mhz 7.8 ? db |s 21 | 2 insertion loss i f = 0.5 ma; f = 900 mhz 0.21 ? db i f = 0.5 ma; f = 1800 mhz 0.28 ? db i f = 0.5 ma; f = 2450 mhz 0.38 ? db |s 21 | 2 insertion loss i f = 1 ma; f = 900 mhz 0.18 ? db i f = 1 ma; f = 1800 mhz 0.26 ? db i f = 1 ma; f = 2450 mhz 0.35 ? db |s 21 | 2 insertion loss i f = 10 ma; f = 900 mhz 0.13 ? db i f = 10 ma; f = 1800 mhz 0.20 ? db i f = 10 ma; f = 2450 mhz 0.30 ? db |s 21 | 2 insertion loss i f = 100 ma; f = 900 mhz 0.10 ? db i f = 100ma; f = 1800 mhz 0.18 ? db i f = 100 ma; f = 2450 mhz 0.28 ? db
s25?2/2 BAP63-03 10 1 10 -1 048121620 i f (ma ) r d ( ? ) 500 400 300 200 100 0 10 -1 1 10 10 2 v r ( v ) c d (pf) f = 100 mhz; t j =25c f = 1 mhz; t j =25c electrical characteristics t j = 25c unless otherwise specified. (continue) symbol parameter conditions typ. max. unit l charge carrier life time when switched from i f =10 ma to 310 ? n s i r = 6 ma; r l = 100 ? ; measured at i r =3 ma l s series inductance 1.5 ? nh note 1. guaranteed on aql basis: inspection level s4, aql 1.0. thermal characteristics symbol p arameter v alue unit r th j-s thermal resistance from junction to soldering-point 120 k/w 0 - 10 - 20 - 30 - 40 f (ghz ) 0 -0.1 -0.2 -0.3 -0.4 -0.5 01 23 f (ghz ) |s 21 | 2 (db) fig.1 forward resistance as a function of forward current; typical values. fig.2 diode capacitance as a function of reverse voltage; typical values. |s 21 | 2 (db) fig.3 insertion loss ( |s 21 | 2 )of the diode in on-state as a function of frequency; typical values. diode inserted in series with a 50 ? stripline circuit and biased via the analyzer tee network. tamb =25c. fig.4 isolation ( |s 21 | 2 ) of the diode in off-state as a function of frequency; typical values. diode zero biased and inserted in series with a 50 ? stripline circuit. tamb =25c. (1) i f =100 ma. (2) i f =10 ma. (3) i f = 1 ma. (4) i f = 0.5 ma. 01 23 |
Price & Availability of BAP63-03
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |